transistors 1 publication date: january 2003 sjc00204bed 2SD1010 silicon npn epitaxial planar type for low-frequency amplification features ? high forward current transfer ratio h fe ? low collector-emitter saturation voltage v ce(sat) ? high emitter-base voltage (collector open) v ebo ? low noise voltage nv absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 50 v collector-emitter voltage (base open) v ceo 40 v emitter-base voltage (collector open) v ebo 15 v collector current i c 50 ma peak collector current i cp 100 ma collector power dissipation p c 300 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 050v collector-emitter voltage (base open) v ceo i c = 1 ma, i b = 040v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 015v collector-base cutoff current (emitter open) i cbo v cb = 20 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 20 v, i b = 01 a forward current transfer ratio * h fe v ce = 10 v, i c = 2 ma 400 2 000 ? collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1 ma 0.05 0.2 v transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 200 mhz noise voltage nv v ce = 10 v, i c = 1 ma, g v = 80 db 80 mv r g = 100 k ? , function = flat electrical characteristics t a = 25 c 3 c unit: mm note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification 5.0 0.2 0.7 0.1 0.45 +0.15 ?0.1 2.5 +0.6 ?0.2 0.45 +0.15 ?0.1 2.5 123 +0.6 ?0.2 4.0 0.2 5.1 0.2 12.9 0.5 2.3 0.2 0.7 0.2 1 : emitter 2 : collector 3 : base to-92-b1 package rank r s t h fe 400 to 800 600 to 1 200 1 000 to 2 000
2SD1010 2 sjc00204bed v ce(sat) ? i c h fe ? i c f t ? i e p c ? t a i c ? v ce i c ? v be c ob ? v cb nv ? i c nv ? v ce 0 160 40 120 80 140 20 100 60 500 400 300 200 100 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 012 10 8 26 4 0 160 120 40 100 140 80 20 60 t a = 25 c 20 a 30 a 40 a 50 a 60 a 70 a 80 a 90 a 10 a i b = 100 a collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce = 10 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 0 1 800 1 500 1 200 900 600 300 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 0.1 ? 1 ? 10 ? 100 0 250 200 150 100 50 v cb = 10 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 1 10 100 0 8 6 2 5 7 4 1 3 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) 0.01 0.1 1 0 100 80 60 40 20 v ce = 10 v g v = 80 db function = flat t a = 25 c 5 k ? r g = 100 k ? 22 k ? noise voltage nv ( mv ) collector current i c ( ma ) 1 10 100 0 100 80 60 40 20 i c = 1 ma g v = 80 db function = flat t a = 25 c 5 k ? r g = 100 k ? 22 k ? noise voltage nv ( mv ) collector-emitter voltage v ce ( v )
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